A Study of Luminescent Centers in Reactive-Ion-Etched Silicon
- T.D. Bestwick
- G.S. Oehrlein
- et al.
- 2019
- JES
Paper
Publications
13 results for B. Monemar
Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material
- B. Monemar
- G.R. Woolhouse
- 2008
- Applied Physics Letters
PaperSome optical properties of the AlxGa1-xAs alloys system
- B. Monemar
- K.K. Shih
- et al.
- 2008
- Journal of Applied Physics
PaperOptical characterization of deep O implants in GaAs
- B. Monemar
- J.M. Blum
- 2008
- Journal of Applied Physics
PaperHigh-resolution composition profiling of GaAs-AlxGa 1-xAs double-hetero-laser structures with photoluminescence
- B. Ḿonemar
- 2008
- Journal of Applied Physics
PaperSecondary dislocation climb during optical excitation of GaAs laser material
- G.R. Woolhouse
- B. Monemar
- et al.
- 2008
- Applied Physics Letters
PaperA photoluminescence study of CF4 reactive-ion-etched silicon: Various process conditions and magnetically enhanced etching
- A. Henry
- B. Monemar
- et al.
- 1993
- Journal of Applied Physics
PaperPhotoluminescence characterization of plasma exposed silicon surfaces
- A. Henry
- B. Monemar
- et al.
- 1991
- Journal of Applied Physics
PaperStrain-induced quantum confinement of carriers due to extended defects in silicon
- H. Weman
- B. Monemar
- et al.
- 1990
- Physical Review B
PaperMicroscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance
- W.M. Chen
- O.O. Awadelkarim
- et al.
- 1990
- Physical Review Letters
Paper