Exciton transport in SiO2 as a possible cause of surface-state generation in MOS structures
- Z.A. Weinberg
- G.W. Rubloff
- 2008
- Applied Physics Letters
Paper
Publications
72 results for G.W. Rubloff
Exciton or hydrogen diffusion in SiO2?
- Z.A. Weinberg
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
PaperThin-film transformations and volatile products in the formation of nanoporous low- k polymethylsilsesquioxane-based dielectric
- P. Lazzeri
- L. Vanzetti
- et al.
- 2005
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperToF-SIMS studies of nanoporous PMSSQ materials: Kinetics and reactions in the processing of low-K dielectrics for ULSI applications
- P. Lazzeri
- G.W. Rubloff
- et al.
- 2004
- Surface and Interface Analysis
PaperRole of gas phase reactions in subatmospheric chemical-vapor deposition ozone/TEOS processes for oxide deposition
- I.A. Shareef
- G.W. Rubloff
- et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperSubatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
- I.A. Shareef
- G.W. Rubloff
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperRole of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
- Cs. Szeles
- B. Nielsen
- et al.
- 1994
- Journal of Applied Physics
PaperIntegrated Processing of MOS Gate Dielectric Structures
- G.W. Rubloff
- M. Offenberg
- et al.
- 1994
- IEEE Trans Semicond Manuf
PaperChemical vapor deposition of rough-morphology silicon films over a broad temperature range
- S.S. Dana
- M. Anderle
- et al.
- 1993
- Applied Physics Letters
PaperPositron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures
- P. Asoka-Kumar
- T.C. Leung
- et al.
- 1992
- Journal of Applied Physics
Paper