Trap creation in silicon dioxide produced by hot electrons
- D.J. DiMaria
- J.W. Stasiak
- 1989
- Journal of Applied Physics
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119 results for D.J. DiMaria
The physics of hot-electron degradation of Si MOSFET's: Can we understand it?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1989
- Applied Surface Science
Coulombic and neutral electron trapping centers in SiO2
- D.A. Buchanan
- M.V. Fischetti
- et al.
- 1989
- Applied Surface Science
An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors
- L.P. Trombetta
- G.J. Gerardi
- et al.
- 1988
- Journal of Applied Physics
Hot electrons in SiO2: ballistic to steady-state transport
- M.V. Fischetti
- D.J. DiMaria
- 1988
- Solid State Electronics
Vacuum emission of hot electrons from silicon dioxide at low temperatures
- D.J. DiMaria
- M.V. Fischetti
- 1988
- Journal of Applied Physics
Correlation of trap creation with electron heating in silicon dioxide
- D.J. Dimaria
- 1987
- Applied Physics Letters
Ballistic electron transport in thin silicon dioxide films
- M.V. Fischetti
- D.J. Dimaria
- et al.
- 1987
- Physical Review B
A Permeable-Base Switching Device Using Stacked Layers of Silicon, Silicon Dioxide, and Silicon-Rich Silicon Dioxide
- D.J. Dimaria
- Maurizio Arienzo
- 1987
- IEEE T-ED
Hot electrons in silicon dioxide: Ballistic to steady-state transport
- D.J. DiMaria
- M.V. Fischetti
- 1987
- Applied Surface Science