Comment on "synchrotron X-Ray Diffraction Study of Si during Pulsed-Laser Annealing"
- James A. Van Vechten
- 1982
- Physical Review Letters
Publications
44 results for J.A. Van Vechten
Coincidence of the thermal melting points of crystalline and amorphous Si and coincidence of thresholds for pulsed beam annealing of crystalline and amorphous Si and GaAs
- J.A Van Vechten
- 1982
- Solid State Communications
Intermixing of an AlAs-GaAs superlattice by Zn diffusion
- J.A. Van Vechten
- 1982
- Journal of Applied Physics
Electronic dilation of si during pulsed laser annealing
- J.A. Van Vechten
- 1982
- Japanese Journal of Applied Physics
I.D. Sawing of silicon crystal in different lubricant environments
- W.A. Westdorp
- K.K. Shih
- et al.
- 1982
- Japanese Journal of Applied Physics
Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal
- J.A. Van Vechten
- M. Wautelet
- 1981
- Physical Review B
Carrier diffusion in semiconductors subject to large gradients of excited carrier density
- M. Wautelet
- J.A. Van Vechten
- 1981
- Physical Review B
Comment on "threshold for optically induced dislocation glide in GaAs-GaAlAs double heterostructures: Degradation via a new cooperative phenomenon?"
- J.H. Basson
- J.A. Van Vechten
- 1981
- Physical Review B
Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealing
- J.A. Van Vechten
- 1981
- Solid State Communications
Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?
- J.A. Van Vechten
- A. Compaan
- 1981
- Solid State Communications