Publications

58 results for F. Cardone

Modeling of the diffusion of implanted boron in strained Si/Si_1-xGe_x
- - Huilong Zhu
  - Kam-Leung Lee
  - et al.
- 2002
- SISPAD 2002
DUV stability of carbon films for attenuated phase shift mask applications
- - Alessandro Callegari
  - Katherina Babich
  - et al.
- 1998
- SPIE Advanced Lithography 1998
Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
- - S. Guha
  - N.A. Bojarczuk
  - et al.
- 1997
- Applied Physics Letters
Defect states in strain-relaxed Si_0.7Ge_0.3 layers grown at low temperature
- - P.M. Mooney
  - L. Tilly
  - et al.
- 1997
- Journal of Applied Physics
Amorphous (Mo, Ta, or W)-Si-N diffusion barriers for Al metallizations
- - J.S. Reid
  - E. Kolawa
  - et al.
- 1996
- Journal of Applied Physics
Thermal velocity limits to diffusive electron transport in thin-base np⁺n GaAs bipolar transistors
- - E.S. Harmon
  - M.R. Melloch
  - et al.
- 1994
- Applied Physics Letters
Film stress of sputtered W/C multilayers and strain relaxation upon annealing
- - J.F. Geisz
  - T.F. Kuech
  - et al.
- 1994
- Journal of Applied Physics
Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and Al_xGa_1-xAs growth
- - J.W. Huang
  - D.F. Gaines
  - et al.
- 1994
- Journal of Electronic Materials
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- - D.A. Grützmacher
  - T.O. Sedgwick
  - et al.
- 1993
- Applied Physics Letters
Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration
- - L. Clevenger
  - N.A. Bojarczuk
  - et al.
- 1993
- Journal of Applied Physics