Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and Al_xGa_1-xAs growth

Controlled oxygen incorporation in GaAs using Al-0 bonding based precursors, dimethyl aluminum methoxide (DMALO) and diethyl aluminum ethoxide (DEALO), is presented in this investigation. A comparison study of oxygen incorporation kinetics between nominally undoped AlxGa1-xAs using trimethyl aluminum and DMALO-doped GaAs suggests that DMALO is one of the most important oxygen-bearing agents responsible for unintentional oxygen incorporation in AlxGa1-xAs. Controlled oxygen doping using DEALO is reported for the first time. Oxygen incorporation behavior, especially on the effect of the V/III ratio, was found to be quite different from the case of DMALO, mainly due to the differences between methyl- and ethyl-based growth chemistries. Physical, electrical, and optical properties of these oxygen-doped GaAs are also reported. © 1994 The Metallurgical of Society of AIME.