Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Controlled oxygen incorporation in GaAs using Al-0 bonding based precursors, dimethyl aluminum methoxide (DMALO) and diethyl aluminum ethoxide (DEALO), is presented in this investigation. A comparison study of oxygen incorporation kinetics between nominally undoped AlxGa1-xAs using trimethyl aluminum and DMALO-doped GaAs suggests that DMALO is one of the most important oxygen-bearing agents responsible for unintentional oxygen incorporation in AlxGa1-xAs. Controlled oxygen doping using DEALO is reported for the first time. Oxygen incorporation behavior, especially on the effect of the V/III ratio, was found to be quite different from the case of DMALO, mainly due to the differences between methyl- and ethyl-based growth chemistries. Physical, electrical, and optical properties of these oxygen-doped GaAs are also reported. © 1994 The Metallurgical of Society of AIME.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications