Some properties of crystallized tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- F.M. D'Heurle
- et al.
- 1984
- Journal of Applied Physics
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159 results for F.M. D'Heurle
Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
- J.E.E. Baglin
- F.M. D'Heurle
- et al.
- 1983
- Journal of Applied Physics
Oxidation of silicide thin films: TiSi2
- F.M. D'Heurle
- E.A. Irene
- et al.
- 1983
- Applied Physics Letters
Thermal formation of SiO2 films over NiSi, NiSi2 and CoSi2 via silicide decomposition
- F.M. d'Heurle
- 1983
- Thin Solid Films
Diffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films
- F.M. D'Heurle
- S. Petersson
- et al.
- 1982
- Journal of Applied Physics
IrSi1.75 a new semiconductor compound
- S. Petersson
- J.A. Reimer
- et al.
- 1982
- Journal of Applied Physics
Growth "kinetics" and growth mechanisms for disilicide layers obtained through implantation
- F.M. D'Heurle
- C.S. Petersson
- et al.
- 1982
- Journal of Applied Physics
Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability
- C.S. Petersson
- J.E.E. Baglin
- et al.
- 1982
- Journal of Applied Physics
The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide
- F. Jahnel
- J.P. Biersack
- et al.
- 1982
- Journal of Applied Physics
Comparison of annealing and ion implantation effects during solid state disilicide formation
- F.M. D'Heurle
- M.Y. Tsai
- et al.
- 1982
- Journal of Applied Physics