Optical constants of In 0.53Ga 0.47As/InP: Experiment and modeling
- Martín Muñoz
- Todd M. Holden
- et al.
- 2002
- Journal of Applied Physics
Paper
Publications
31 results for Fred H. Pollak
Burstein-Moss shift of n-doped (formula presented)
- Martín Muñoz
- Fred H. Pollak
- et al.
- 2001
- Physical Review B - CMMP
PaperBurstein-Moss shift of n-doped In0.53Ga0.47As/inp
- Martín Muñoz
- Fred H. Pollak
- et al.
- 2001
- Physical Review B - CMMP
PaperLow-temperature grown III-V materials
- M.R. Melloch
- J. Woodall
- et al.
- 1995
- Annual Review of Materials Science
PaperContactless electromodulation for in situ characterization of semiconductor processing
- X. Yin
- X. Guo
- et al.
- 1993
- Applied Surface Science
PaperNature of band bending at semiconductor surfaces by contactless electroreflectance
- X. Yin
- Xinxin Guo
- et al.
- 1992
- Applied Physics Letters
PaperRole of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
PaperPhotoreflectance study of the surface Fermi level at (001) n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperUniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- H. Qiang
- Fred H. Pollak
- et al.
- 1992
- Surface Science
PaperPhotoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters
Paper