High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
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141 results for Marilyne Sousa
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Gate dielectrics for high mobility semiconductors
- A. Dimoulas
- Y. Panayiotatos
- et al.
- 2008
- ECS Meeting 2008
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide
- Mattia Halter
- Laura Bégon-Lours
- et al.
- 2023
- Communications Materials
Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
- Katarzyna E. Hnida-Gut
- Marilyne Sousa
- et al.
- 2023
- Discover Nano
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In-Memory Computing
- Tommaso Stecconi
- Roberto Guido
- et al.
- 2022
- Advanced Electronic Materials
Structural Assessment of Interfaces in Projected Phase-Change Memory
- Valeria Bragaglia
- Vara Prasad Jonnalagadda
- et al.
- 2022
- Nanomaterials