Role of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
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177 results for J. Woodall
Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1992
- Physical Review B
Photoreflectance study of the surface Fermi level at (001) n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IIIB-8 High-Density Optical Storage Using Arsenic Nanoclusters in GaAs and AlGaAs
- M.R. Melloch
- D.D. Nolte
- et al.
- 1992
- IEEE T-ED
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters
Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- H. Qiang
- Fred H. Pollak
- et al.
- 1992
- Surface Science
Formation of two-dimensional arsenic-precipitate arrays in GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
Impact of surface processing on Al/GaAs(100) interface states
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Solid State Communications
High-density optical storage based on nanometer-size arsenic clusters in low-temperature-growth GaAs
- D.D. Nolte
- M.R. Melloch
- et al.
- 1992
- Applied Physics Letters
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Applied Physics Letters