PaperAsymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayersK.L. Kavanagh, M.A. Capano, et al.Journal of Applied Physics
PaperEffect of iso-electronic dopants on the dislocation density of GaAsG.M. Blom, J. WoodallJournal of Electronic Materials
PaperLocalized and nonlocalized states in thin Ge layers grown by molecular-beam epitaxy at low temperaturesJ.C. Tsang, J. Freeouf, et al.Physical Review B
