Effects of inversion asymmetry on electron energy band structures in GaSb/InAs/GaSb quantum wells
- J. Luo
- H. Munekata
- et al.
- 1990
- Physical Review B
Paper
Publications
67 results for F. Fang
The effects of inversion asymmetry on subband structures in GaSb-InAs-GaSb quantum wells
- J. Luo
- H. Munekata
- et al.
- 1990
- Surface Science
PaperFloating gate technique as a thermodynamic probe of two-dimensional electron systems
- A.M. Dabiran
- F. Fang
- et al.
- 1990
- Surface Science
PaperTwo-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures
- P.J. Wang
- F. Fang
- et al.
- 1989
- Applied Physics Letters
PaperHigh hole mobility in Si/Si1-xGex/Si p-type modulation-doped double heterostructures
- P.J. Wang
- B.S. Meyerson
- et al.
- 1989
- Applied Physics Letters
PaperTwo-subband transport: A conundrum in scattering
- T.P. Smith III
- F. Fang
- et al.
- 1988
- Physical Review B
PaperObservation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wells
- J. Luo
- H. Munekata
- et al.
- 1988
- Physical Review B
PaperUpper-subband transport in GaAs heterostructures
- T.P. Smith III
- F. Fang
- 1988
- Physical Review B
PaperDependence of activation energy on subband splitting and magnetic field in silicon inversion layers
- Dragana Popović
- F. Fang
- et al.
- 1988
- Solid State Communications
PaperLandau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures
- F. Fang
- T.P. Smith III
- et al.
- 1988
- Surface Science
Paper