Comment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]
- F.F. Morehead
- 2011
- Journal of Materials Research
Publications
28 results for F.F Morehead
Shallow junctions by high-dose As implants in Si: Experiments and modeling
- M.Y. Tsai
- F.F. Morehead
- et al.
- 2008
- Journal of Applied Physics
Model for the formation of amorphous Si by ion bombardment
- F.F. Morehead
- B.L. Crowder
- 2006
- Radiation Effects
Efficient electroluminescence from p-n junctions in CdTe at 77°K
- G. Mandel
- F.F. Morehead
- 2004
- Applied Physics Letters
Efficient injection electroluminescence in znte by avalanche breakdown
- B.L. Crowder
- F.F. Morehead
- et al.
- 2004
- Applied Physics Letters
Efficient, visible electroluminescence from P-N junctions in Zn xCd1-xTe
- F.F. Morehead
- G. Mandel
- 2004
- Applied Physics Letters
Injection mechanism and recombination kinetics in electroluminescent cdte diodes
- F.F. Morehead
- 2004
- Journal of Applied Physics
Formation of amorphous silicon by ion bombardment as a function of ion, temperature, and dose
- F.F. Morehead
- B.L. Crowder
- et al.
- 2003
- Journal of Applied Physics
Boron diffusion in silicon at high concentrations
- W.A. Orr Arienzo
- R. Glang
- et al.
- 1988
- Journal of Applied Physics
Enhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomena
- F.F. Morehead
- R.F. Lever
- 1986
- Applied Physics Letters