The effect of randomness in the distribution of impurity atoms on FET thresholdsRobert W. Keyes1975Applied PhysicsPaper
Bonding and antibonding potentials in group-IV semiconductorsRobert W. Keyes1975Physical Review LettersPaper
Antibonding potentials and dielectric properties of amorphous phasesR.W. Keyes1975Physics Letters APaper
Special Correspondence Effect of Randomness in the Distribution of Impurity Ions on FET Thresholds in Integrated ElectronicsRobert W. Keyes1975IEEE JSSCPaper
Figure of merit for semiconductors for high-speed switchesRobert W. Keyes1972Proceedings of the IEEEPaper