J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Review
Electronic effects in the specific heat of silicon
Abstract
Recent interest in the low-temperature specific heat of heavily doped silicon may help to resolve questions posed by measurements of the dependence of the Debye temperature of germanium on doping. © 1975 The American Physical Society.
Related
John G. Long, Peter C. Searson, et al.
JES
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications