Electronic effects in the specific heat of silicon

Robert W. Keyes

doi:10.1103/PhysRevB.12.2539

Physical Review B

Review

15 Sep 1975

Electronic effects in the specific heat of silicon

View publication

Abstract

Recent interest in the low-temperature specific heat of heavily doped silicon may help to resolve questions posed by measurements of the dependence of the Debye temperature of germanium on doping. © 1975 The American Physical Society.

Conference paper

Integration of polymer self-assembly for lithographic application

Joy Y. Cheng, Daniel P. Sanders, et al.

SPIE Advanced Lithography 2008

Paper

Vortex dynamics in YBaCuO single crystals with point- and line-like defects-flux creep studies

J.R. Thompson, Yang Ren Sun, et al.

Physica A: Statistical Mechanics and its Applications

Conference paper

Investigations of silicon nano-crystal floating gate memories

Arvind Kumar, Jeffrey J. Welser, et al.

MRS Spring 2000

Paper

Persistent spectral hole burning in deuterated (formula presented)

R.M. Macfarlane, R.L. Cone

Physical Review B - CMMP

View all publications

Abstract

Related

Integration of polymer self-assembly for lithographic application

Vortex dynamics in YBaCuO single crystals with point- and line-like defects-flux creep studies

Investigations of silicon nano-crystal floating gate memories

Persistent spectral hole burning in deuterated (formula presented)