CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Conference paper
Publications
13 results for C. Dziobkowski
Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
Conference paperDual damascene reactive ion etch polymer characterization through x-ray photoelectron spectroscopy for 65 nm and 45nm technology nodes
- Samuel S. Choi
- Chet Dziobkowski
- et al.
- 2009
- MRS Spring Meeting 2009
Conference paperEffect of oxygen at the Cu-SiCxNy interface on electromigration performance of interconnect structures
- E. Liniger
- C. Dziobkowski
- 2006
- Thin Solid Films
PaperPECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paperLower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Conference paperLow-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Conference paperReliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004
Conference paper90 nm SiCOH technology in 300 mm manufacturing
- L. Clevenger
- M. Yoon
- et al.
- 2004
- ADMETA 2004
Conference paperComprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Conference paper