Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
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34 results for P. Kozlowski
Electrical characterization of germanium p-channel MOSFETs
- H. Shang
- H. Okorn-Schimdt
- et al.
- 2003
- IEEE Electron Device Letters
Sub-30 nm abrupt P+ junction formation with Ge preamorphization and high energy Si co-implantation
- K.L. Lee
- Ted Zabel
- et al.
- 1999
- MRS Spring Meeting 1999
Transient enhanced diffusion and dose loss of indium in silicon
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 1999
- MRS Spring Meeting 1999
Extremely thin SOI (ETSOI) technology: Past, present, and future
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2010
- IEEE International SOI Conference 2010
Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- VLSI-TSA 2010
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
Contact resistivity of NiPtSi on n-doped silicon activated by laser annealing
- Francois Pagette
- Paul M. Solomon
- et al.
- 2008
- MRS Proceedings 2008
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006