Assessment of fully-depleted planar CMOS for low power complex circuit operationZhibin RenS. Mehtaet al.2011IEDM 2011
Sub-25nm FinFET with advanced fin formation and short channel effect engineeringTenko YamashitaVeeraraghvan S. Baskeret al.2011VLSI Technology 2011
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyondD.-G. ParkK. Steinet al.2009VLSI-TSA 2009
FinFET resistance mitigation through design and process optimizationCindy WangJosephine Changet al.2009VLSI-TSA 2009
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cellB. HaranA. Kumaret al.2008IEDM 2008
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETsZhibin RenG. Peiet al.2008VLSI Technology 2008
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substratesHaizhou YinZ. Renet al.2006VLSI Technology 2006
Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substratesQiqing OuyangMin Yanget al.2005VLSI Technology 2005
Dual stress liner enhancement in hybrid orientation technologyC. SherawM. Yanget al.2005VLSI Technology 2005
Fabrication of metal gated FinFETs through complete gate silicidation with NiJakub KedzierskiMeikei Ieonget al.2004IEEE Transactions on Electron Devices