Publications

135 results for James C. Tsang

Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
- - R.A. Kiehl
  - P.E. Batson
  - et al.
- 1993
- Physical Review B
Critical test of the structure of the ordered phase in epitaxially grown SixGe1-x films
- - F.K. LeGoues
  - R.M. Tromp
  - et al.
- 1993
- Physical Review B
Luminescence degradation in porous silicon
- - M.A. Tischler
  - R.T. Collins
  - et al.
- 1992
- Applied Physics Letters
Raman spectroscopy of C_ySi_1-y alloys grown by molecular beam epitaxy
- - J.C. Tsang
  - K. Eberl
  - et al.
- 1992
- Applied Physics Letters
Synthesis of Si_1-yC_y alloys by molecular beam epitaxy
- - Subramanian S. Iyer
  - K. Eberl
  - et al.
- 1992
- Applied Physics Letters
Raman scattering from H or O terminated porous Si
- - J.C. Tsang
  - M.A. Tischler
  - et al.
- 1992
- Applied Physics Letters
Enhanced nucleation and growth of diamond on SiC by plasma enhanced chemical vapor deposition using thin metal films
- - J.E. Yehoda
  - R.I. Fuentes
  - et al.
- 1992
- Applied Physics Letters
Growth and strain compensation effects in the ternary Si _1-x-yGe_xC_y alloy system
- - K. Eberl
  - Subramanian S. Iyer
  - et al.
- 1992
- Applied Physics Letters
Microstructural evolution and substrate selectivity in PECVD μc-Si
- - G.N. Parsons
  - J.J. Boland
  - et al.
- 1992
- Symposium on Dynamics in Small Confining Systems 1992
Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloys
- - J.C. Tsang
  - V.P. Kesan
  - et al.
- 1992
- Physical Review B