J.C. Tsang, John Kirtley
Solid State Communications
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
J.C. Tsang, John Kirtley
Solid State Communications
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Journal of Crystal Growth
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Physical Review Letters
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Semiconductor Science and Technology