J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters
C.C. Han, X.Z. Wang, et al.
Journal of Applied Physics
T.F. Kuech, M.A. Tischler, et al.
Applied Physics Letters
J.C. Tsang, P.M. Mooney, et al.
Journal of Applied Physics