J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters
J.C. Tsang, M.S. Dresselhaus, et al.
Physical Review B
S. Shapira, U. Sivan, et al.
Surface Science
R.A. Kiehl, P.E. Batson, et al.
Physical Review B