Determination of spin- and valley-split energy levels in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1999
- Semiconductor Science and Technology
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148 results for Jack O. Chu
Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy
- Z. Kovats
- T. Salditt
- et al.
- 1999
- Journal of Physics D: Applied Physics
X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates
- P.M. Mooney
- J.A. Ott
- et al.
- 1998
- Applied Physics Letters
1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
- S.J. Koester
- B.-U. Klepser
- et al.
- 1998
- DRC 1998
Negative differential conductance in strained Si point contacts and wires
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well
- S.J. Koester
- K. Ismail
- et al.
- 1997
- IEEE Electron Device Letters
Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures
- K. Ismail
- J.O. Chu
- et al.
- 1997
- IEEE Electron Device Letters
Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si
- Kai Shum
- P.M. Mooney
- et al.
- 1997
- Applied Physics Letters
Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature
- P.M. Mooney
- L. Tilly
- et al.
- 1997
- Journal of Applied Physics
Novel three-terminal negative differential conductance device in silicon: The hot-electron phonon-emission field-effect transistor
- S.J. Koester
- K. Ismail
- et al.
- 1997
- DRC 1997