A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Conference paper
Publications
6 results for Martin Ostermayr
Strategies for single patterning of contacts for 32nm and 28nm technology
- Bradley Morgenfeld
- Ian Stobert
- et al.
- 2011
- ASMC 2011
Conference paperSingle exposure contacts are dead. Long live single exposure contacts!
- Henning Haffner
- Martin Ostermayr
- et al.
- 2011
- SPIE Advanced Lithography 2011
Conference paperNovel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technology
- Jin-Ping Han
- Takashi Shimizu
- et al.
- 2011
- Japanese Journal of Applied Physics
PaperCompetitive and cost effective high-k based 28nm CMOS technology for low power applications
- F. Arnaud
- A. Thean
- et al.
- 2009
- IEDM 2009
Conference paperHigh-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
- D.-G. Park
- K. Stein
- et al.
- 2009
- VLSI-TSA 2009
Conference paper