Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technologyJin-Ping HanTakashi Shimizuet al.2011Japanese Journal of Applied Physics
Performance elements for 28nm gate length bulk devices with gate first high-k metal gateJun YuanC. Gruensfelderet al.2010ICSICT 2010
Competitive and cost effective high-k based 28nm CMOS technology for low power applicationsF. ArnaudA. Theanet al.2009IEDM 2009
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrateJ. YuanV. Chanet al.2008ICSICT 2008
Channel Strain Characterization in Embedded SiGe by Nano-beam DiffractionJ. LiA. Lambertiet al.2008ECS Meeting 2008
A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first processX. ChenS. Samavedamet al.2008VLSI Technology 2008
High performance transistors featured in an aggressively scaled 45nm bulk CMOS technologyZ. LuoN. Rovedoet al.2007VLSI Technology 2007
A 45nm low cost low power platform by using integrated dual-stress-liner technologyJ. YuanS.S. Tanet al.2006VLSI Technology 2006
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devicesJ.-P. HanH. Utomoet al.2006IEDM 2006