Publications

26 results for Tom Wallow

EUV OPC for 56 nm metal pitch
- - Martin Burkhardt
  - Matt Colburn
  - et al.
- 2011
- SPIE Advanced Lithography 2011
Revisit pattern collapse for 14nm node and beyond
- - Kenji Yoshimoto
  - Craig Higgins
  - et al.
- 2011
- SPIE Advanced Lithography 2011
Exposure tool settings and OPC strategies for EUV Lithography at the 16nm node
- - Yunfei Deng
  - Jongwook Kye
  - et al.
- 2009
- SPIE Advanced Lithography 2009
Are extreme ultraviolet resists ready for the 32 nm node?
- - Karen Petrillo
  - Yayi Wei
  - et al.
- 2007
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Initial experience establishing a EUV baseline lithography process for manufacturability assessment
- - O.R. Wood II
  - D. Back
  - et al.
- 2007
- SPIE Advanced Lithography 2007
193-nm negative resist based on acid-catalyzed elimination of polar molecules
- - R. Sooriyakumaran
  - B. Davis
  - et al.
- 2004
- Microlithography 2004
Characterization of the polymer-developer interface in 193 nm photoresist polymers and formulations during dissolution
- - Thomas Wallow
  - Wendy Chan
  - et al.
- 2002
- Microlithography 2002
193nm single layer resist materials: Total consideration on design, physical properties, and lithographic performances on all major alicyclic platform chemistries
- - T. Kajita
  - Y. Nishimura
  - et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
Novel classes of cyclic olefin polymers for 193 nm lithography
- - P. Rao Varanasi
  - R.D. Allen
  - et al.
- 2001
- J. Photopolym. Sci. Tech.
Dissolution/swelling behavior of cycloolefin polymers in aqueous base
- - Hiroshi Ito
  - R.D. Allen
  - et al.
- 2000
- Microlithography 2000