A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
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22 results for K.N. Chen
Programmable via using indirectly heated phase-change switch for reconfigurable logic applications
- Ku N. Chen
- L. Krusin-Elbaum
- et al.
- 2008
- IEEE Electron Device Letters
Wafer-level 3D integration technology
- Steven J. Koester
- Albert M. Young
- et al.
- 2008
- IBM J. Res. Dev
Silicon layer stacking enabled by wafer bonding
- Chuan Seng Tan
- Kuan-Neng Chen
- et al.
- 2006
- MRS Fall Meeting 2006
Evidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress
- L. Krusin-Elbaum
- C. Cabral
- et al.
- 2007
- Applied Physics Letters
Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack
- C. Cabral Jr.
- K.N. Chen
- et al.
- 2007
- Applied Physics Letters
Structure, design and process control for Cu bonded interconnects in 3D integrated circuits
- Kuan-Neng Chen
- Sang Hwui Lee
- et al.
- 2006
- IEDM 2006
Improved manufacturability of Cu bond pads and implementation of seal design in 3D integrated circuits and packages
- K.N. Chen
- C. Tsang
- et al.
- 2006
- VMIC 2006
Thermal stress evaluation of a PCRAM material Ge2Sb 2Te5
- K.N. Chen
- L. Krusin-Elbaum
- et al.
- 2006
- NVSMW 2006
Bonding parameters of blanket copper wafer bonding
- K.N. Chen
- A. Fan
- et al.
- 2006
- Journal of Electronic Materials