A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
Conference paper
Publications
28 results for Robert Wisnieff
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
Conference paper65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Conference paperInterconnect Issues post 45nm
- S.M. Rossnagel
- Robert L. Wisnieff
- et al.
- 2005
- IEDM 2005
Conference paperBEOL interconnects for 45 nm node and beyond
- R.R. Yu
- J. Doyle
- et al.
- 2005
- VMIC 2005
Conference paperElectroless deposition of NiB on 15 inch glass substrates for the fabrication of transistor gates for liquid crystal displays
- Emmanuel Delamarche
- Matthias Geissler
- et al.
- 2003
- Langmuir
PaperElectronic displays for information technology
- Robert L. Wisnieff
- J.J. Ritsko
- 2000
- IBM J. Res. Dev
PaperHigh-dielectric constant insulators and the AMLCD process: is amorphous BST a candidate?
- P. Andry
- D.A. Neumayer
- et al.
- 1999
- MRS Spring Meeting 1999
Conference paperElectrical test sites for AMLCD-TFT array process characterization
- E.G. Colgan
- R.J. Polastre
- et al.
- 1998
- MRS Spring Meeting 1998
Conference paperA 10.5-in.-diagonal SXGA active-matrix display
- E.G. Colgan
- P.M. Alt
- et al.
- 1998
- IBM J. Res. Dev
Paper