Publications

28 results for Robert Wisnieff

A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- - F. Liu
  - R.R. Yu
  - et al.
- 2008
- IEDM 2008
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- - S. Gates
  - A. Grill
  - et al.
- 2006
- ADMETA 2006
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- - V. McGahay
  - G. Bonilla
  - et al.
- 2006
- IITC 2006
Interconnect Issues post 45nm
- - S.M. Rossnagel
  - Robert L. Wisnieff
  - et al.
- 2005
- IEDM 2005
BEOL interconnects for 45 nm node and beyond
- - R.R. Yu
  - J. Doyle
  - et al.
- 2005
- VMIC 2005
Electroless deposition of NiB on 15 inch glass substrates for the fabrication of transistor gates for liquid crystal displays
- - Emmanuel Delamarche
  - Matthias Geissler
  - et al.
- 2003
- Langmuir
Electronic displays for information technology
- - Robert L. Wisnieff
  - J.J. Ritsko
- 2000
- IBM J. Res. Dev
High-dielectric constant insulators and the AMLCD process: is amorphous BST a candidate?
- - P. Andry
  - D.A. Neumayer
  - et al.
- 1999
- MRS Spring Meeting 1999
Electrical test sites for AMLCD-TFT array process characterization
- - E.G. Colgan
  - R.J. Polastre
  - et al.
- 1998
- MRS Spring Meeting 1998
A 10.5-in.-diagonal SXGA active-matrix display
- - E.G. Colgan
  - P.M. Alt
  - et al.
- 1998
- IBM J. Res. Dev