Reactive ion etching of SiGe alloys using HBr
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
Paper
Publications
118 results for Gottlieb S. Oehrlein
Grazing angle optical emission interferometry for end-point detection
- David Angell
- Gottlieb S. Oehrlein
- 1991
- Applied Physics Letters
PaperInteractive effects in the reactive ion etching of SiGe alloys
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1991
- Applied Physics Letters
PaperHigh hydrogen concentrations produced by segregation into p+ layers in silicon
- A.D. Marwick
- G.S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
PaperNonintrusive wafer temperature measurement using in situ ellipsometry
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1991
- Journal of Applied Physics
PaperPhotoluminescence characterization of plasma exposed silicon surfaces
- A. Henry
- B. Monemar
- et al.
- 1991
- Journal of Applied Physics
PaperCryogenic reactive ion etching of silicon in SF6
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
PaperX-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- A.S. Yapsir
- G.S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
PaperReactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- H. Weman
- J.L. Lindström
- et al.
- 1990
- Journal of Applied Physics
PaperSelective dry etching of silicon with respect to germanium
- G.S. Oehrlein
- T.D. Bestwick
- et al.
- 1990
- Applied Physics Letters
Paper