Gottlieb S. Oehrlein, Arthur A. Bright, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.
Gottlieb S. Oehrlein, Arthur A. Bright, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Tim D. Bestwick, Gottlieb S. Oehrlein, et al.
Applied Physics Letters
Sebastian Engelmann, Robert L. Bruce, et al.
Plasma Processes and Polymers
Gottlieb S. Oehrlein, Kevin K. Chan, et al.
Journal of Applied Physics