Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- R. Kalish
- G.S. Oehrlein
- et al.
- 1985
- Nuclear Inst. and Methods in Physics Research, B
Publications
Date
Featured collections
Popular topics
118 results for Gottlieb S. Oehrlein
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
Raman spectroscopy of reactive ion etching induced subsurface damage
- J.C. Tsang
- G.S. Oehrlein
- et al.
- 1985
- Applied Physics Letters
Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy
- R.M. Feenstra
- G.S. Oehrlein
- 1985
- Applied Physics Letters
Asymptotic estimates of diffusion times for rapid thermal annealing
- J.D. Fehribach
- R. Ghez
- et al.
- 1985
- Applied Physics Letters
DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
Some properties of crystallized tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- F.M. D'Heurle
- et al.
- 1984
- Journal of Applied Physics
Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
Study of silicon contamination and near-surface damage caused by CF 4/H2 reactive ion etching
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1984
- Applied Physics Letters