Publications

23 results for Mariko Takayanagi

Electron mobility limited by remote charge scattering in thin (100)- and (110)-oriented silicon body double-gated metal-oxide-semiconductor field-effect transistors with high-k gate dielectrics
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2012
- Japanese Journal of Applied Physics
Impact of back bias on ultra-thin body and BOX (UTBB) devices
- - Q. Liu
  - Frederic Monsieur
  - et al.
- 2011
- VLSI Technology 2011
Ultra-thin Body and BOX (UTBB) device for aggressive scaling of CMOS technology
- - Q. Liu
  - A. Yagishita
  - et al.
- 2011
- CSTIC 2011
Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO₂ gate stack systems
- - Yoshinori Tsuchiya
  - Nathaniel Berliner
  - et al.
- 2011
- Japanese Journal of Applied Physics
Intrinsic effects of the crystal orientation difference between (100) and (110) silicon substrates on characteristics of high-k/metal gate metal-oxide-semiconductor field-effect transistors
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- Japanese Journal of Applied Physics
Characteristics of La₂O₃-and Al₂O ₃-capped HfO₂ dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- Japanese Journal of Applied Physics
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- IEEE T-ED
Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- - Yoshinori Tsuchiya
  - Nathaniel Berliner
  - et al.
- 2010
- IEDM 2010
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2010
- IEEE T-ED
Ultra-thin-body and BOX (UTBB) Fully Depleted (FD) device integration for 22nm node and beyond
- - Q. Liu
  - A. Yagishita
  - et al.
- 2010
- VLSI Technology 2010