Publications

83 results for Yuan Taur

25 nm CMOS design considerations
- - Y. Taur
  - C. Wann
  - et al.
- 1998
- IEDM 1998
Generalized scale length for two-dimensional effects in MOSFET's
- - David J. Frank
  - Yuan Taur
  - et al.
- 1998
- IEEE Electron Device Letters
1.0-V and 1.5-V operation of 4-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on bulk and SOI substrates
- - Yo-Chuol Ho
  - C. Wann
  - et al.
- 1998
- SiRF 1998
RF perspective of sub-tenth-micron CMOS
- - C. Wann
  - L. Su
  - et al.
- 1998
- ISSCC 1998
Discrete random dopant distribution effects in nanometer-scale MOSFETs
- - Hon-Sum Philip Wong
  - Yuan Taur
  - et al.
- 1998
- Microelectronics Reliability
FEOL technology trend
- - Yuan Taur
  - Tak H. Ning
- 1998
- Materials Chemistry and Physics
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz f_T
- - Clement Wann
  - Fariborz Assaderaghi
  - et al.
- 1997
- IEEE Electron Device Letters
Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel
- - H.-S. Wong
  - K.K. Chan
  - et al.
- 1997
- IEDM 1997
Asymmetry in effective-channel length of n- and p-MOSFETs
- - L.R. Logan
  - Y. Taur
  - et al.
- 1997
- SISPAD 1997
Modeling and characterization of n⁺- and p⁺-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- - S.H. Lo
  - D.A. Buchanan
  - et al.
- 1997
- VLSI Technology 1997