B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing
- S. Jin
- K.S. Jones
- et al.
- 2012
- Journal of Applied Physics
Paper
Publications
11 results for M.E. Law
Electrical activation in silicon-on-insulator after low energy boron implantation
- Antonio F. Saavedra
- Kevin S. Jones
- et al.
- 2004
- Journal of Applied Physics
PaperComparison of {311} Defect Evolution in SIMOX and Bonded SOI Materials
- A.F. Saavedra
- K.S. Jones
- et al.
- 2004
- JES
PaperConcentration dependence of boron-interstitial cluster (BIC) formation in silicon-on-insulator (SOI)
- A.F. Saavedra
- K.S. Jones
- et al.
- 2004
- MRS Proceedings 2004
Conference paperKinetics of {3 1 1} defect dissolution in silicon-on-insulator (SOI)
- A.F. Saavedra
- K.S. Jones
- et al.
- 2004
- Materials Science and Engineering: B
PaperSilicon self-interstitial cluster formation and dissolution in SOI
- A.F. Saavedra
- J. Frazer
- et al.
- 2002
- MRS Proceedings 2002
Conference paperComprehensive model for nitrogen diffusion in silicon
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
PaperA physical model for implanted nitrogen diffusion and its effect on oxide growth
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 2000
- Technical Digest - International Electron Devices Meeting
PaperNitrogen implantation and diffusion in silicon
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 1999
- MRS Spring Meeting 1999
PaperStudy of end of range loop interactions with B+ implant damage using a boron doped diffusion layer
- J.K. Listebarger
- H.G. Robinson
- et al.
- 1995
- Journal of Applied Physics
Paper