Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Publications
83 results for Randy Feenstra
Scanning tunneling microscopy of in situ cleaved and hydrogen passivated Si(110) cross-sectional surfaces
- M.A. Lutz
- R.M. Feenstra
- et al.
- 1995
- Surface Science
PaperInfluence of misfit dislocations on the surface morphology of Si1-xGex films
- M.A. Lutz
- R.M. Feenstra
- et al.
- 1995
- Applied Physics Letters
PaperLow-temperature grown III-V materials
- M.R. Melloch
- J. Woodall
- et al.
- 1995
- Annual Review of Materials Science
PaperRelaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
PaperEffect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset
- M.W. Wang
- D.A. Collins
- et al.
- 1995
- Applied Physics Letters
PaperScattering from strain variations in high-mobility Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- 1995
- Journal of Applied Physics
PaperScanning tunneling microscopy and spectroscopy of arsenic antisite defects in GaAs
- R.M. Feenstra
- J. Woodall
- et al.
- 1993
- ICDS 1993
PaperCross-sectional scanning tunnelling microscopy of III-V semiconductor structures
- R.M. Feenstra
- 1994
- Semiconductor Science and Technology
ReviewRoughness analysis of Si1-xGex films
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1994
- MRS Fall Meeting 1994
Conference paper