Influence of misfit dislocations on the surface morphology of Si_1-xGe_x films

The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1-xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60°dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed. © 1995 American Institute of Physics.