Radiation-induced trapping centers in thin silicon dioxide films
- J.M. Aitken
- 1980
- Journal of Non-Crystalline Solids
Paper
Publications
27 results for John Aitken
Sensitive Technique for Measuring Small MOS Gate Currents
- F.H. Gaensslen
- J.M. Aitken
- 1980
- IEEE Electron Device Letters
Paper1 μm MOSFET VLSI Technology: Part VIIII—Radiation Effects
- John M. Aitken
- 1979
- IEEE T-ED
Paper1 µm MOSFET VLSI Technology: Part VIII-Radiation Effects
- John M. Aitken
- 1979
- IEEE JSSC
PaperUse of photocurrent-voltage characteristics of MOS structures to determine insulator bulk trapped charge densities and centroids
- D.J. DiMaria
- Z.A. Weinberg
- et al.
- 1977
- Journal of Electronic Materials
PaperAvalanche injection of holes into SiO2
- J.M. Aitken
- D.R. Young
- 1977
- IEEE TNS
PaperElectron injection studies of radiation induced positive charge in MOS devices
- J.M. Aitken
- D.J. DiMaria
- et al.
- 1976
- IEEE TNS
Paper