Effect of TaN stoichiometry on barrier oxidation and defect density in 32nm Cu/ultra-low K interconnectsAndrew H. SimonFrieder Baumannet al.2010MRS Online Proceedings Library
Extendibility study of a PVD Cu seed process with Ar+ Rf-Plasma enhanced coverage for 45nm interconnectsAndrew H. SimonTibor Bolomet al.2008MRS Spring Meeting 2008
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technologyS. SankaranS. Araiet al.2006IEDM 2006
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applicationsMatthew AngyalJason Gillet al.2005AMC 2005