Wideband mmWave CML static divider in 65nm SOI CMOS technology
- Daeik D. Kim
- Ongyeun Cho
- et al.
- 2008
- CICC 2008
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89 results for Jean-Olivier Plouchart
65nm SOI CMOS SoC technology for low-power mmwave and RF platform
- Daeik D. Kim
- Jonghae Kim
- et al.
- 2008
- SiRF 2008
60 GHz transmitter circuits in 65nm CMOS
- Alberto Valdes-Garcia
- Scott Reynolds
- et al.
- 2008
- RFIC 2008
SOI CMOS technology with 360GHz fT NFET, 260GHz fT PFET, and record circuit performance for millimeter-wave digital and analog system-on-chip applications
- Sungjae Lee
- Jonghae Kim
- et al.
- 2007
- VLSI Technology 2007
A 1.2V 15.6mW 81GHz 2:1 static CML frequency divider with a band-pass load in a 90nm SOI CMOS technology
- Jean-Olivier Plouchart
- Daiek Kim
- et al.
- 2007
- CSICS 2007
A 75GHz PLL front-end integration in 65nm SOI CMOS technology
- Daeik Kim
- Jonghae Kim
- et al.
- 2007
- VLSI Circuits 2007
CMOS mixed-signal circuit process variation sensitivity characterization for yield improvement
- Daeik Kim
- Ongyeun Cho
- et al.
- 2006
- CICC 2006
Low phase noise 5 GHz VCOs in 0.13 μm SOI and bulk CMOS
- David I. Sanderson
- Jonghae Kim
- et al.
- 2006
- ICSICT 2006
Double-gate FET technology for RF applications: Device characteristics and low noise amplifier design
- Karan Bhatia
- Keunwoo Kim
- et al.
- 2006
- IEEE SOI 2006
Scalability of SOI CMOS technology and circuit to millimeter wave performance
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2005
- CSICS 2005