High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions
- J.Z. Sun
- M.C. Gaidis
- et al.
- 2009
- Journal of Applied Physics
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64 results for Philip Trouilloud
Theory for symmetric toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2007
- Applied Physics Letters
Materials and devices for reduced switching field toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2006
- Journal of Applied Physics
Two-level BEOL processing for rapid iteration in MRAM development
- Michael C. Gaidis
- Eugene J. O'Sullivan
- et al.
- 2006
- IBM J. Res. Dev
Rapid-turnaround characterization methods for MRAM development
- David W. Abraham
- Philip L. Trouilloud
- et al.
- 2006
- IBM J. Res. Dev
Recent advances in MRAM technology
- W.J. Gallagher
- D.W. Abraham
- et al.
- 2005
- VLSI Technology 2005
A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
Thermally activated switching of small magnetic tunnel junctions
- R. Leuschner
- V. Korenivski
- et al.
- 2003
- INTERMAG 2003
Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
- D.C. Worledge
- P.L. Trouilloud
- 2003
- Applied Physics Letters
Thermally activated switching of small magnetic tunnel junctions
- R. Leuschner
- V. Korenivski
- et al.
- 2003
- INTERMAG 2003