D.C. Worledge, G. Hu, et al.
IEDM 2010
Paper
Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
Abstract
Magnetoresistance (MR) measurement of unpatterned magnetic tunnel junction wafers was discussed. Current-in-plane tunneling was used. It was found that results are particularly useful for optimizing deposition conditions, nondestructive monitoring and also measures thermal stability.
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