Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
- J. Nowak
- R.P. Robertazzi
- et al.
- 2011
- IEEE Magnetics Letters
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42 results for Guohan Hu
High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer
- M. Tofizur Rahman
- Andrew Lyle
- et al.
- 2011
- Journal of Applied Physics
Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions
- D.C. Worledge
- G. Hu
- et al.
- 2011
- Applied Physics Letters
Switching distributions and write reliability of perpendicular spin torque MRAM
- D.C. Worledge
- G. Hu
- et al.
- 2010
- IEDM 2010
A three-terminal spin-torque-driven magnetic switch
- J.Z. Sun
- M.C. Gaidis
- et al.
- 2009
- Applied Physics Letters
Field and bias dependence of high-frequency magnetic noise in MgO-based magnetic tunnel junctions
- Y. Guan
- D.W. Abraham
- et al.
- 2009
- Journal of Applied Physics
High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions
- J.Z. Sun
- M.C. Gaidis
- et al.
- 2009
- Journal of Applied Physics
Magnetic and recording properties of patterned perpendicular islands
- B.D. Terris
- G. Hu
- et al.
- 2005
- INTERMAG 2005
Magnetization reversal in CoPd nanostructures and films
- G. Hu
- T. Thomson
- et al.
- 2005
- Journal of Applied Physics
Recording and reversal properties of nanofabricated magnetic islands
- B.D. Terris
- M. Albrecht
- et al.
- 2005
- IEEE Transactions on Magnetics