Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
- J. Batey
- S.L. Wright
- 1986
- Journal of Applied Physics
Paper
Publications
112 results for S.L. Wright
Probe pressure effect on tunneling current through a GaAs-(Al,Ga)As-GaAs heterojunction barrier
- P. Solomon
- S.L. Wright
- et al.
- 1986
- Applied Physics Letters
PaperHot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)
- T.N. Theis
- B.D. Parker
- et al.
- 1986
- Applied Physics Letters
PaperEffect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
PaperVoltage-controlled dissipation in the quantum Hall effect in a laterally constricted two-dimensional electron gas
- J.R. Kirtley
- Z. Schlesinger
- et al.
- 1986
- Physical Review B
PaperTrapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature
- M.I. Nathan
- P.M. Mooney
- et al.
- 1986
- Surface Science
PaperEnergy band alignment in GaAs:(Al,Ga)As heterostructures
- J. Batey
- S.L. Wright
- 1986
- Surface Science
PaperLow-voltage breakdown of the quantum Hall state in a laterally constricted two-dimensional electron gas
- J.R. Kirtley
- Z. Schlesinger
- et al.
- 1986
- Physical Review B
PaperExperimental determination of the current flow in the quantum Hall regime
- B.B. Goldberg
- Ch. Simon
- et al.
- 1986
- Surface Science
PaperExperimental study of the current flow in the quantum Hall regime
- Ch. Simon
- B.B. Goldberg
- et al.
- 1986
- Physical Review B
Paper