Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have observed controlled, low-voltage breakdown of the quantum Hall state in GaAs-AlxGa1-xAs heterostructures with lateral constrictions a few micrometers in width. The breakdown characteristics show an onset of dissipation at voltages corresponding to the cyclotron energy for even filling factors. Analysis of these results in terms of a simple model implies that the dissipation process involves interlevel as well as intralevel scattering, and therefore that large potential gradients are present in the two-dimensional electron gas. © 1986 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Z. Schlesinger, S. Allen, et al.
ICPS Physics of Semiconductors 1984
Revanth Kodoru, Atanu Saha, et al.
arXiv
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020