Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond
- Veeresh Deshpande
- Vladimir Djara
- et al.
- 2017
- Japanese Journal of Applied Physics
Paper
Publications
25 results for Veeresh Deshpande
Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms
- H.J. Park
- L. Pirro
- et al.
- 2017
- Solid-State Electronics
PaperDC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2017
- Solid-State Electronics
PaperFirst demonstration of InGaAs/SiGe CMOS inverters and dense SRAM arrays on Si using selective epitaxy and standard FEOL processes
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- VLSI Technology 2016
Conference paperTheoretical and experimental analysis of capacitance and mobility in InGaAs
- F.M. Bufler
- M. Frey
- et al.
- 2016
- DRC 2016
Conference paperFabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
Conference paperFirst RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
Conference paperCMOS-compatible replacement metal gate InGaAs-OI FinFET With ION=156μA/μm at VDD= 0.5V and IOFF=100nA/μm
- V. Djara
- Veeresh Deshpande
- et al.
- 2016
- IEEE Electron Device Letters
PaperTri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
PaperLow Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
Paper