Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability
- Rajan Arora
- Zachary E. Fleetwood
- et al.
- 2014
- IEEE TNS
Paper
Publications
12 results for Ronald D. Schrimpf
Trade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS
- Rajan Arora
- En Xia Zhang
- et al.
- 2011
- IEEE TNS
PaperHeavy ion testing with iron at 1 GeV/amu
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2010
- IEEE TNS
PaperHeavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
- Jonathan A. Pellish
- Robert A. Reed
- et al.
- 2009
- IEEE TNS
PaperHeavy ion testing at the galactic cosmic ray energy peak
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2009
- RADECS 2009
Conference paperRadiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates
- Anuj Madan
- Jiong Jiong Mo
- et al.
- 2009
- RADECS 2009
Conference paperPerformance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling
- Sokrates T. Pantelides
- L. Tsetseris
- et al.
- 2009
- ECS Meeting 2009
Conference paperThe radiation tolerance of strained Si/SiGe n-MODFETs
- Anuj Madan
- Bongim Jun
- et al.
- 2007
- IEEE TNS
PaperX-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
- Marco Bellini
- Bongim Jun
- et al.
- 2006
- IEEE TNS
PaperNegative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics
- X.J. Zhou
- L. Tsetseris
- et al.
- 2004
- Applied Physics Letters
Paper