A SiGe-base PNP ECL circuit technology
- D.L. Harame
- J.H. Comfort
- et al.
- 1993
- VLSI Technology 1993
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76 results for John D. Cressler
SPIRIT - A bipolar/BiCMOS isolation technology for high-performance VLSI
- J.N. Burghartz
- A.O. Cifuentes
- et al.
- 1993
- VLSI Technology 1993
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
AC-coupled complementary push-pull ECL circuit with 34 fJ power-delay product
- C.T. Chuang
- J.D. Cressler
- et al.
- 1993
- Electronics Letters
Fabrication of Tungsten Local Interconnect for VLSI Bipolar Technology
- N.J. Mazzeo
- J.D. Warnock
- et al.
- 1993
- JES
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters