Conference paper
Oxide breakdown model and its impact on SRAM cell functionality
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
The Letter describes the first experimental result of a high-speed low-power ECL-based AC-coupled complementary push-pull circuit. Implemented in a 0.8µm high-performance fully complementary bipolar technology with 50GHz npn transistor and 13GHz pnp transistor, a power-delay product of 34fJ (23.2ps at 1.48mW) has been achieved compared with 67 fJ (45 ps at 1.48mW) for the npn-only ECL circuit. © 1993, The Institution of Electrical Engineers. All rights reserved.
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
P.F. Lu, C.T. Chuang
CICC 1992
J.N. Burghartz, J.D. Cressler, et al.
Microelectronic Engineering
A. Petrou, L.P. Fu, et al.
Journal of Applied Physics