Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2010
- IEEE TNS
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22 results for Paul W. Marshall
Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM
- David F. Heidel
- Paul W. Marshall
- et al.
- 2009
- IEEE TNS
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
- Jonathan A. Pellish
- Robert A. Reed
- et al.
- 2009
- IEEE TNS
Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2009
- RADECS 2009
Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates
- Anuj Madan
- Jiong Jiong Mo
- et al.
- 2009
- RADECS 2009
Heavy ion testing at the galactic cosmic ray energy peak
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2009
- RADECS 2009
Low energy proton single-event-upset test results on 65 nm SOI SRAM
- David F. Heidel
- Paul W. Marshall
- et al.
- 2008
- IEEE TNS
The radiation tolerance of strained Si/SiGe n-MODFETs
- Anuj Madan
- Bongim Jun
- et al.
- 2007
- IEEE TNS
X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
- Marco Bellini
- Bongim Jun
- et al.
- 2006
- IEEE TNS
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI
- Tianbing Chen
- Akil K. Sutton
- et al.
- 2005
- IEEE TNS