High performance complementary bipolar technology
- J. Warnock
- J.D. Cressler
- et al.
- 1993
- VLSI Technology 1993
Conference paper
Publications
75 results for Dave Harame
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperA high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Conference paperSiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
Conference paperIIA-4 Low-Temperature Operation of SiGe p-n-p HBT's
- E.F. Crabbé
- D.L. Harame
- et al.
- 1992
- IEEE T-ED
PaperLow thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Conference paperThe thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition
- S. Stiffler
- J.H. Comfort
- et al.
- 1991
- Journal of Applied Physics
PaperAdvanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
Conference paperHigh-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
PaperSubmicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
Paper