IEEE Transactions on Electron Devices
Paper
01 Jan 1993

IIA-3 113-GHz fT Graded-Base SiGe HBT's

View publication

Abstract

No abstract available.

Related

Paper

Diamond-like carbon as an electrical insulator of copper devices for chip cooling

E. Marotta, N. Bakhru, et al.

Thin Solid Films

Paper

SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

P.W. Li, E.S. Yang, et al.

IEEE Electron Device Letters

Conference paper

Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S. Voldman, P. Juliano, et al.

EOS/ESD 2000

Paper

On the Leverage of High-fT Transistors for Advanced High-Speed Bipolar Circuits

C.T. Chuang, Ken Chin, et al.

IEEE Journal of Solid-State Circuits

View all publications
  1. Home
  2. ↳ Publications

Date

01 Jan 1993

Publication

IEEE Transactions on Electron Devices

Authors

  • E.F. Crabbé
  • B.S. Meyerson
  • D.L. Harame
  • J.M.C. Stork
  • A.C. Megdanis
  • J.M. Cotte
  • J.O. Chu
  • M.M. Gilbert
  • Carol Stanis
  • J.H. Comfort
  • G.L. Patton
  • S. Subbanna
IBM-affiliated at time of publication

Resources

  • Publication

Share