IEEE Transactions on Electron Devices
Paper
01 Jan 1993

IIA-3 113-GHz fT Graded-Base SiGe HBT's

View publication

Abstract

No abstract available.

Related

Conference paper

Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors

J.N. Burghartz, J.H. Comfort, et al.

IEDM 1990

Paper

High-Performance Si/SiGe n-Type Modulation-Doped Transistors

Khaled Ismail, S. Rishton, et al.

IEEE Electron Device Letters

Paper

Low-temperature Si and Si:Ge epitaxy by uitrahigh-vacuum/ chemical vapor deposition: Process fundamentals

B.S. Meyerson

IBM J. Res. Dev

Paper

Two-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures

P.J. Wang, F. Fang, et al.

Applied Physics Letters

View all publications
  1. Home
  2. ↳ Publications

Date

01 Jan 1993

Publication

IEEE Transactions on Electron Devices

Authors

  • E.F. Crabbé
  • B.S. Meyerson
  • D.L. Harame
  • J.M.C. Stork
  • A.C. Megdanis
  • J.M. Cotte
  • J.O. Chu
  • M.M. Gilbert
  • Carol Stanis
  • J.H. Comfort
  • G.L. Patton
  • S. Subbanna
IBM-affiliated at time of publication

Resources

  • Publication

Share