Titanium silicide/titanium nitride full metal gates for dual-channel gate-first CMOS
- Martin M. Frank
- Cyril Cabral
- et al.
- 2016
- IEEE Electron Device Letters
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162 results for Cyril Cabral
Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials
- Dmitry Shakhvorostov
- Razvan A. Nistor
- et al.
- 2009
- PNAS
Subtractive W contact and local interconnect co-integration (CLIC)
- Fei Liu
- Benjamin Fletcher
- et al.
- 2013
- IITC 2013
Interconnect material choices for future scaled devices
- Gregory Fritz
- Adam Pyzyna
- et al.
- 2012
- ADMETA 2012
Cu-based bonding technology for 3D integration applications
- K.N. Chen
- Zheng Xu
- et al.
- 2012
- 3DIC 2012
Interconnect processes and reliability for RF technology
- Jeffrey P. Gambino
- F. Anderson
- et al.
- 2011
- IPFA 2011
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
Metallization opportunities and challenges for future back-end-of-the-line technology
- Cyril Cabral Jr.
- Benjamin Fletcher
- et al.
- 2010
- ADMETA 2010
Investigations of Cu bond structures and demonstration of a wafer-level 3D integration scheme with W TSVs
- K.N. Chen
- Cyril Cabral Jr.
- et al.
- 2010
- VLSI-TSA 2010